Infineon Technologies has started production of its OptiMOS 7 40 V power MOSFET portfolio, designed for AI servers, data centers, and telecommunications equipment. The devices target high frequency DC DC converters where board area, power dissipation, and thermal management are critical constraints. Intended for 48 V systems and emerging 800 V DC architectures, the MOSFETs can support switching frequencies above 1 MHz in suitable converter topologies for enhanced conversion efficiency.
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OptiMOS 7 Targets High-Frequency Intermediate Bus Converter Secondary Stages
The portfolio is designed for high-frequency DC-DC conversion and targets the low-voltage side of high-voltage intermediate bus converters. Within emerging 800-V DC systems, the devices support secondary conversion stages after primary high-voltage conversion. They are also suitable for intermediate bus converters in current 48-V power supplies. This dual applicability gives server designers a component option supporting established platforms and future power architectures without requiring separate device families for each generation.
OptiMOS 7 balances key parameters to reduce converter losses
Infineon has balanced the on-state resistance, output charge, and gate charge of its OptiMOS 7 40 V MOSFETs to reduce losses across key operating conditions. Lower RDS(on) decreases conduction losses, while optimized Qoss and Qg limit energy dissipated during switching and gate driving. According to Richard Kuncic, head of Power Switches, this coordinated device design supports higher power density where AI server board area and thermal capacity are severely constrained.
OptiMOS 7 cuts resistance and charge figures significantly
Infineon illustrates the performance advance of its OptiMOS 7 40 V technology by comparing the Source-Down IQE010N04LM7CGSC with the earlier OptiMOS 6 IQE013N04LM6CGSC. At a gate-source voltage of 4.5 V, the newer device achieves a maximum RDS(on) reduction of up to 33 percent. Its output-charge and gate-charge figures of merit are each lowered by up to 35 percent, supporting lower-loss operation in high-frequency converter stages with reduced dissipation under load.
OptiMOS MOSFETs support 5-volt drive, GaN ecosystems, 175°C operation
These MOSFETs are designed for efficient operation with a 5 V gate drive, simplifying integration into modern low-voltage power stages. They are compatible with driver ecosystems also used for gallium-nitride switches, allowing designers to maintain flexible control architectures. The devices are rated for junction temperatures up to 175 °C, supporting demanding thermal conditions. In suitable converter topologies, their switching behavior enables operating frequencies above 1 MHz for dense converters.
Infineon introduces compact Source-Down PQFN MOSFETs with double-sided cooling
Infineon provides Source-Down packages and versions designed for double-sided cooling to support space-constrained power converter layouts. The IQE010N04LM7CG and IQE010N04LM7CGSC devices use a 3.3 mm by 3.3 mm PQFN package with a centrally positioned gate connection and Source-Down architecture. Both are offered in overmolded and double-sided cooling configurations. At a 10 V gate-source voltage, each MOSFET specifies a maximum RDS(on) of 1.0 mΩ, enabling low conduction losses in compact converter stages.
Drain-Down MOSFETs offer low resistance and double-sided cooling options
The portfolio also includes the ISCH65N04LM7SC, ISCH69N04LM7SC, and ISC011N04LM7SC MOSFETs, which are housed in 5 mm à 6 mm PQFN packages. Their drain-down configuration and double-sided cooling support efficient heat removal in compact power stages. Specified at a 10 V gate-source voltage, maximum RDS(on) values are 0.65 mΩ, 0.69 mΩ, and 1.1 mΩ, respectively. These alternatives let designers balance board layout, thermal performance, and conduction losses for demanding converter implementations in server power systems.
OptiMOS 7 40 V MOSFET portfolio enters volume production
Infineon has released the switching-optimized OptiMOS 7 40 V MOSFET portfolio for volume production, making the devices available for power-conversion designs. Supporting documentation includes an application note with practical circuit examples and detailed performance comparisons. Engineers can use these materials to examine device behavior in specific intermediate bus converter topologies, assess thermal-management approaches, and determine whether the MOSFETs meet efficiency, cooling, and switching-frequency requirements for server or telecommunications power stages.
Infineons OptiMOS 7 40-V MOSFET portfolio combines low conduction losses and reduced switching losses with compact package choices designed for effective thermal management. It supports both established 48-V power systems and emerging 800-V DC architectures, particularly in high-frequency conversion stages. For AI servers and data center power supplies, the devices provide a scalable path toward higher power density, improved efficiency, and reliable operation at elevated switching frequencies in constrained layouts.
